Title :
The future of EUV lithography
Author_Institution :
Motorola Assignee at Int. SeMaTech, Austin, TX, USA
Abstract :
Summary form only given. Extreme ultraviolet lithography (EUVL) is the exposure technology of choice to succeed optical lithography for volume semiconductor manufacturing at feature sizes below 50 nm. EUVL uses radiation at 13.5 nm from a plasma source to project an image using reflective optics and a reflective mask.
Keywords :
integrated circuit manufacture; masks; semiconductor device manufacture; ultraviolet lithography; 13.5 nm; 50 nm; EUV lithography; image projection; optical lithography; plasma source; reflective mask; reflective optics; volume semiconductor manufacturing; Electron optics; Industrial control; Lithography; Manufacturing industries; Particle beam optics; Plasma sources; Semiconductor device manufacture; Ultraviolet sources; X-ray imaging;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268752
