Title :
A 19W high-efficiency wide-band CMOS-GaN class-E Chireix RF outphasing power amplifier
Author :
Der Heijden, Mark P van ; Acar, Mustafa ; Vromans, Jan S. ; Calvillo-Cortes, David A.
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
Abstract :
A class-E Chireix outphasing power amplifier is presented that enables high efficiency across a wide power back-off range and RF bandwidth. In this design the Chireix compensation elements and class-E loading conditions are provided by an asymmetric coupled-line power combiner. The class-E operated GaN HEMT switches are driven by high-speed, high-voltage CMOS drivers, implemented in a standard 65nm process technology. The proposed concept demonstrates 51.6% system average power efficiency and 65.1% average drain efficiency for a 7.5dB PAR WCDMA signal at 1.95GHz, while meeting the ACLR specifications. Moreover, the PA demonstrated more than 60% drain efficiency across a 6dB power back-off range and up to 19W peak power between 1800-2050MHz.
Keywords :
CMOS analogue integrated circuits; III-V semiconductors; UHF integrated circuits; UHF power amplifiers; code division multiple access; gallium compounds; power HEMT; power combiners; wide band gap semiconductors; Chireix compensation elements; GaN; HEMT switches; RF bandwidth; WCDMA signal; asymmetric coupled-line power combiner; class-E loading conditions; frequency 1800 MHz to 2050 MHz; high-speed CMOS drivers; high-voltage CMOS drivers; outphasing power amplifier; power 19 W; size 65 nm; CMOS integrated circuits; Driver circuits; Gallium nitride; Peak to average power ratio; Power amplifiers; Radio frequency; Transmitters; Balun; CMOS; Chireix combiner; class-E; efficiency; gallium nitride; outphasing amplifier; power amplifier;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972564
