Correlation between printability and visibility of defects in EUV mask blanks

Author

Ito, M. ; Tezuka, Y. ; Terasawa, T. ; Tomie, T.

Author_Institution

MIRAI, AIST, Tsukuba, Japan

fYear

2003

fDate

29-31 Oct. 2003

Firstpage

278

Lastpage

279

Abstract

In this paper, reflective mask for EUV lithography consists of multilayer-coated substrate called a mask blank, and a patterned absorber layer on top. The near field reflected off a Mo/Si multilayer with a gaussian shaped defect is calculated using a time-domain finite-element method. The reasonably good correlation indicates that critical defects can be differentiated from non-critical defects with high reliability. We will also present the correlation for other types of multilayer defects.

Keywords

elemental semiconductors; finite element analysis; masks; molybdenum; multilayers; reliability; semiconductor process modelling; silicon; ultraviolet lithography; EUV mask blanks; Mo-Si; Mo/Si multilayer; gaussian shaped defect; multilayer defects; multilayer-coated substrate; printability; reliability; time-domain finite-element method; visibility; Electronics industry; Indium tin oxide; Industrial electronics; Inspection; Light scattering; Lithography; Nonhomogeneous media; Optical imaging; Optical scattering; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-040-2

Type

conf

DOI

10.1109/IMNC.2003.1268754

Filename

1268754