DocumentCode :
2581249
Title :
A 75–110 GHz Digitally-Probed Artificial Dielectric phase demodulator in 65nm CMOS
Author :
Tang, A. ; Virbila, G. ; LaRocca, T. ; Chang, M.F.
Author_Institution :
Univ. of California, Los Angeles, CA, USA
fYear :
2011
fDate :
5-10 June 2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper introduces the Digitally Probed Artificial Dielectric (DiPAD) demodulator: a direct carrier frequency and phase demodulator that operates by digitally detecting the voltage standing-wave response of periodically loaded transmission lines with CMOS sensors. The proposed demodulator allows for the direct demodulation of phase or frequency encoded signals without the need for an analog to digital converter, enabling the construction of a simpler, more power efficient mm-wave receiver. The proposed DiPAD demodulator was implemented in 65nm CMOS technology and operates at carrier frequencies up to 110 GHz, while consuming only 0.47mW of DC power and occupying only 0.16mm2 of silicon area.
Keywords :
CMOS digital integrated circuits; demodulators; electric sensing devices; millimetre wave receivers; CMOS sensors; digitally-probed artificial dielectric phase demodulator; direct carrier frequency; frequency 75 GHz to 110 GHz; frequency encoded signals; periodically loaded transmission lines; power 0.47 mW; power efficient mm-wave receiver; size 65 nm; voltage standing-wave response; Oscilloscopes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
ISSN :
0149-645X
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2011.5972572
Filename :
5972572
Link To Document :
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