Title :
High-performance fully integrated 4 GHz CMOS LC VCO in standard 0.18-μm CMOS technology
Author :
Lu, Shey-Shi ; Wang, Tao ; Lin, Yo-Sheng
Author_Institution :
Graduate Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
In this paper, we demonstrate that high Q-factor inductors on normal 750-μm-thick silicon substrate (in standard 0.18-μm CMOS technology) can be achieved by optimization of the layout of the inductors. To study the effect of pattern-ground-shield (PGS) on our designed inductors, we compare the performance of the inductors with and without PGS. In addition, a state-of-the-art 4-GHz CMOS LC voltage-controlled oscillator (VCO) with phase noise of -119.94 dBc/Hz measured at 1 MHz offset frequency is reported.
Keywords :
CMOS logic circuits; Q-factor; inductors; substrates; voltage-controlled oscillators; 0.18 micron; 1 MHz; 4 GHz; 750 micron; CMOS LC voltage-controlled oscillator; high Q-factor inductors; high-performance fully integrated CMOS LC VCO; pattern-ground-shield; silicon substrate; CMOS process; CMOS technology; Energy consumption; Frequency conversion; Inductors; Integrated circuit technology; Phase noise; Q factor; Silicon; Voltage-controlled oscillators;
Conference_Titel :
Emerging Information Technology Conference, 2005.
Print_ISBN :
0-7803-9328-7
DOI :
10.1109/EITC.2005.1544374
