• DocumentCode
    2581291
  • Title

    A comprehensive PHEMT core model for switch applications

  • Author

    Wei, Ce-Jun ; Zhu, Yu ; Yin, Hong ; Klimashov, Olesky ; Bartle, Dylan

  • Author_Institution
    Skyworks Solutions Inc., Woburn, MA, USA
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A comprehensive non-linear PHEMT core model for switch applications is described. The model combines an accurate description of CV below pinch-off and a 2D CV function above pinch-off for better charge and capacitance modeling. At the same time, more accurate is the model´s IV prediction on the current in the near pinch-off region. The model has detailed leakage equations and dispersion function covering a wide range of operation, and taking gate lag into consideration. The model was verified by a variety of measured data, including IV/transfer curves, leakages, floating voltages and S-parameters/CV curves. In a switch application, comparison between modeled and measured data on harmonics, insertion loss and isolation regarding various driving power shows excellent and consistent agreement in both on-state and off-state.
  • Keywords
    capacitance; electric charge; field effect transistor switches; high electron mobility transistors; semiconductor device models; 2D CV function; capacitance modeling; charge modeling; comprehensive PHEMT core model; comprehensive nonlinear PHEMT core model; dispersion function; leakage equations; switch application; Capacitance; Harmonic analysis; Integrated circuit modeling; Logic gates; Mathematical model; PHEMTs; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5972576
  • Filename
    5972576