Title :
Alignment offset analyzer against Wafer Induced Shift (WIS)
Author :
Ina, H. ; Matsumoto, T. ; Sentoku, K.
Author_Institution :
Nanotechnol. & Adv. Syst. Res. Labs., Canon Inc., Tochigi, Japan
Abstract :
Summary form only given. In this article, we demonstrate an error analyser to quantify the wafer induced shift alignment error using atomic force microscopy (AFM) and optical simulation. We have called this analyser the ´Alignment Offset Analyser´.
Keywords :
atomic force microscopy; elemental semiconductors; error analysis; etching; lithography; resists; silicon; AFM; Si; alignment offset analyzer; atomic force microscopy; error analyser; lithography; optical simulation; resists; silicon; wafer induced shift; Analytical models; Atom optics; Atomic force microscopy; Laboratories; Lithography; Measurement errors; Nanotechnology; Optical microscopy; Resists; Surfaces;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268769
