Transient response of PIN limiter diodes

Results of experimental and theoretical studies have determined which physical parameters of PIN diode junctions control their dynamic responses as limiters to fast-risetime microwave pulses. Both RF and DC dynamic impedance measurements were made and compared, with good agreement, to theoretical calculations which model both the junction and intrinsic regions of the PIN diode. One interesting analytic result is that a low level of p-type doping in the intrinsic region reduces the transient turn-on response time and reduces the turn-on peak voltage. The holes in the intrinsic region help compensate for the lower hole mobility in Si.<>