Title :
Electron cyclotron resonance-reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH/sub 4//H/sub 2//Ar and O/sub 2/ with constant Ar flow
Author :
Haneji, N. ; Ide, T. ; Awa, Y. ; Arakawa, T. ; Tada, K. ; Sugiyama, M. ; Shimogaki, Y. ; Nakano, Y.
Author_Institution :
Graduate Sch. of Eng., Yokohama Nat. Univ., Japan
Abstract :
In this paper, we showed the combination of continuous etching and cyclic etching with/without constant Ar flow to each multilayer structure such as InGaAs/InAlAs/InP for optical devices such as lasers and optical modulators. We also applied cyclic etching with constant Ar flow to GaN, and obtained good surface morphology and etching characteristics.
Keywords :
III-V semiconductors; aluminium compounds; cyclotron resonance; gallium arsenide; indium compounds; multilayers; semiconductor thin films; sputter etching; surface morphology; Ar; Ar flow; GaN; H/sub 2/; H/sub 2/-Ar-O/sub 2/; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP multilayer structure; O/sub 2/; cyclic etching; electron cyclotron resonance; lasers; optical devices; optical modulators; reactive ion etching; surface morphology; Argon; Cyclotrons; Electrons; Etching; Gallium nitride; Indium compounds; Indium gallium arsenide; Indium phosphide; Nonhomogeneous media; Resonance;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268780
