DocumentCode :
2581537
Title :
Acceleration of dielectric charging/discharging by RF power in microelectromechanical capacitive switches
Author :
Molinero, D. ; Palego, C. ; Halder, S. ; Luo, X. ; Hallden-Abberton, A. ; Hwang, J. C M ; Goldsmith, C.L.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
fYear :
2011
fDate :
5-10 June 2011
Firstpage :
1
Lastpage :
4
Abstract :
RF power, when approaching the handling capacity of microelectromechanical capacitive switches, was found to accelerate both the charging and discharging of the dielectric in the switches. The amount of acceleration appeared to be greater than what could be explained by self biasing and self heating. Since the long-term reliability of the switches is limited by dielectric charging, the RF power-handling capacity of the switches may have to be derated to ensure long-term reliability.
Keywords :
dielectric devices; microswitches; RF power; RF power-handling capacity; dielectric charging-discharging; long-term reliability; microelectromechanical capacitive switches; Acceleration; Dielectrics; Heating; Micromechanical devices; Microwave theory and techniques; Radio frequency; Stress; Charge injection; dielectric films; dielectric materials; heating; microelectromechanical devices; microwave devices; switches; temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
ISSN :
0149-645X
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2011.5972588
Filename :
5972588
Link To Document :
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