Fast Parallel Programming Of Multi-level NAND Flash Memory Cells Using The Booster-line Technology

Author

Kim, H.S. ; Choi, J.D. ; Kim, J. ; Shin, W.C. ; Kim, D.J. ; Mang, K.M. ; Ahn, S.T.

Author_Institution

Memory Division, Semiconductor Business, Samsung Electronics Co., LTD. San #24, Nongseo-Lee, Kiheung-Eup, Yongin-City, Kyungl&Do, 449-900, Korea

fYear

1997

fDate

10-12 June 1997

Firstpage

Lastpage

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on

Print_ISBN

4-930813-75-1

Type

DOI

10.1109/VLSIT.1997.623697

Filename

623697

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