DocumentCode :
2581547
Title :
Fast Parallel Programming Of Multi-level NAND Flash Memory Cells Using The Booster-line Technology
Author :
Kim, H.S. ; Choi, J.D. ; Kim, J. ; Shin, W.C. ; Kim, D.J. ; Mang, K.M. ; Ahn, S.T.
Author_Institution :
Memory Division, Semiconductor Business, Samsung Electronics Co., LTD. San #24, Nongseo-Lee, Kiheung-Eup, Yongin-City, Kyungl&Do, 449-900, Korea
fYear :
1997
fDate :
10-12 June 1997
Firstpage :
65
Lastpage :
66
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
Type :
conf
DOI :
10.1109/VLSIT.1997.623697
Filename :
623697
Link To Document :
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