Title :
Highly selective isotropic etching processes
Author :
Borel, S. ; Arvet, C. ; Bilde, J. ; Louis, D.
Author_Institution :
CEA, Grenoble, France
Abstract :
We show how it was possible to develop an etching process of SiGe with a high selectivity to similar materials such as nitride, oxide and even pure silicon. The study of the material and process parameters has lead to an understanding of the etching mechanisms and permitted to control the selectivity so as to improve or invert it, which gave rise to new ideas of integration.
Keywords :
Ge-Si alloys; elemental semiconductors; multilayers; semiconductor materials; silicon; sputter etching; Si/sub 0.8/Ge/sub 0.2/:Si; SiGe-Si; isotropic etching; Chemicals; Etching; Germanium alloys; Germanium silicon alloys; MOS devices; MOSFETs; Plasma applications; Plasma chemistry; Plasma devices; Silicon germanium;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-040-2
DOI :
10.1109/IMNC.2003.1268782
