Title :
Temperature Sensor Front End in SOI CMOS Operating up to 250
Author :
Pathrose, Jerrin ; Lei Zou ; Chai, Kevin T. C. ; Minkyu Je ; Yong Ping Xu
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
This brief presents a complementary-to-absolute-temperature voltage and a voltage reference based on the threshold voltage Vth extraction principle. The proposed Vth extraction circuit eliminates the nonlinear temperature-dependent mobility and mobility ratio terms, and it achieves a wide operating temperature range from -25 °C to 250 °C. The threshold-voltage temperature coefficient (TC) mismatch between nMOS and pMOS is compensated by selecting different channel lengths. Fabricated in the 1-μm partially depleted silicon-on-insulator CMOS process, the voltage reference achieves a box model TC of 27 parts per million (ppm) (mean) for an operating temperature range of -25 °C-250 °C and 18.7 ppm (mean) for a range of 25 °C-150 °C. Furthermore, the ratiometric output achieves mean temperature inaccuracy within ±1.8% over a temperature of 275 °C.
Keywords :
elemental semiconductors; reference circuits; silicon; silicon-on-insulator; temperature sensors; SOI CMOS; Si; TC; complementary-to-absolute-temperature voltage; extraction circuit elimination; extraction principle; nMOS compensation; nonlinear temperature-dependent mobility; pMOS compensation; partially depleted silicon-on-insulator CMOS process; size 1 mum; temperature -25 degC to 250 degC; temperature sensor front end; threshold-voltage temperature coefficient; voltage reference; CMOS integrated circuits; MOS devices; Temperature distribution; Temperature measurement; Temperature sensors; Threshold voltage; High temperature; silicon on insulator (SOI); temperature sensor front end; threshold-voltage extraction; voltage reference;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2014.2327316