Title :
Low loss cryogenic InAs/AlSb HEMT non-reflective SP4T switch
Author :
Ma, Bob Yintat ; Bergman, Joshua ; Hacker, Jonathan B. ; Sullivan, Gerard ; Sailer, Alan ; Brar, B.
Author_Institution :
Teledyne Sci. & Imaging, Thousand Oaks, CA, USA
Abstract :
A non-reflective single pole four throw (SP4T) MMIC switch using ABCS InAs/AlSb HEMT process technology, designed for cryogenic temperature has been fabricated and characterized. This switch is suitable for low RF power applications that require very low insertion loss and good isolation. At 2 GHz, the SP4T switch demonstrated 0.52dB insertion loss and 33dB isolation at room temperature. At 90K, the switch has seen 0.2dB and 2dB improvement in insertion loss and isolation. These results demonstrate the outstanding potential of ABCS HEMT technology for low loss switches for cryogenic temperature.
Keywords :
III-V semiconductors; aluminium compounds; cryogenics; field effect transistor switches; indium compounds; ABCS HEMT technology; InAs-AlSb; cryogenic HEMT non-reflective SP4T switch; cryogenic temperature; frequency 2 GHz; insertion loss; temperature 293 K to 298 K; Cryogenics; HEMTs; Insertion loss; Loss measurement; Resistance; Switches; ABCS; HEMT; InAs/AlSb HEMT; MMIC; SP4T; antimonide-based compound semiconductor; single pole four throw; switch;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972601