Title :
GaAs-on-Si: a GaAs IC manufacturer´s perspective
Author :
Wilson, Mark R. ; Shen, Y.D. ; Welch, B.M. ; Lee, Jae W. ; McCullough, R.E. ; Salerno, J.P. ; Fan, J.C.C.
Author_Institution :
GigaBit Logic Inc., Newbury, CA, USA
Abstract :
The performance, yield, and reliability of GaAs ICs (integrated circuits) fabricated on OMCVD (organometallic chemical-vapor-deposition)-grown GaAs-on-Si substrates are described. These substrates were used to fabricate MSI-level digital ICs (integrated circuits) in a manufacturing environment. They were processed together with LEC (liquid-encapsulated Czochralski)-grown GaAs wafers to provide a direct comparison with bulk material. Initial evaluations of devices and circuits suggest that it is realistic to believe that GaAs-on-Si substrates can be a viable alternative to LEC-grown GaAs materials. In addition, a two-part reliability study has demonstrated that GaAs-on-Si parts have no liabilities in terms of parametric instability or catastrophic failure mechanisms. However, there are epitaxial growth conditions which must be optimized further to obtain performance which is not inferior to bulk GaAs materials.<>
Keywords :
CVD coatings; III-V semiconductors; circuit reliability; digital integrated circuits; monolithic integrated circuits; GaAs; GaAs-Si; LEC; MSI-level digital ICs; OMCVD; catastrophic failure mechanisms; epitaxial growth conditions; parametric instability; performance; reliability; yield; Chemicals; Digital integrated circuits; Epitaxial growth; Failure analysis; Gallium arsenide; Integrated circuit manufacture; Integrated circuit reliability; Integrated circuit yield; Manufacturing; Substrates;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11067
