DocumentCode :
2581782
Title :
Failure models in power device interconnects
Author :
Hansen, Peter ; McCluskey, Patrick
Author_Institution :
Univ. of Maryland, College Park
fYear :
2007
fDate :
2-5 Sept. 2007
Firstpage :
1
Lastpage :
9
Abstract :
This paper presents failure models and associated material constants for the dominant failures in today´s power modules. The developed models and material data are used in physics-of-failure based reliability assessment of power electronics for a wide range of applications. The models presented in this paper are aimed at chip and wire modules, direct interconnect technology, and pressure contacts. Mechanisms addressed include wirebond fatigue, die attach fatigue, and gate spring failure.
Keywords :
power electronics; power system interconnection; power system reliability; failure models; power device interconnects; power electronics; reliability assessment; Failure analysis; Life estimation; Life testing; Materials reliability; Multichip modules; Power electronics; Power system interconnection; Power system modeling; Power system reliability; Wire; IGBT; Power Cycling; Reliability; Thermal Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
Type :
conf
DOI :
10.1109/EPE.2007.4417406
Filename :
4417406
Link To Document :
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