Flash memories: a review

Author

Gill, Manzur

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

1996

fDate

24-26 Jun 1996

Firstpage

142

Abstract

Summary form only given. Many approaches are being used to manufacture or develop flash memory products to meet various market needs. These approaches can be classified broadly according to programming mechanism: channel hot electron (including source-side injection) and Fowler-Nordheim tunnelling. Some of the technologies in manufacturing or in development are: NOR stack gate, split gate, source-side injection NAND, DINOR, AND. In addition, a host of technologies for embedded flash applications are in different stages of development. Multi-level cell technologies are being developed to reduce cost/bit. 3-D structures are being investigated to realize small cell size. This paper reviews the different memory technologies, principles of operation, the status, the tradeoffs in cost, performance and reliability. It also discusses emerging flash technologies to serve industrial and next generation consumer electronic products including low voltage, low power portable and mobile devices

Keywords

PROM; integrated circuit manufacture; integrated circuit reliability; integrated circuit technology; integrated memory circuits; reviews; technological forecasting; 3D structures; AND; DINOR; Fowler-Nordheim tunnelling; NAND; NOR stack gate; cell size; channel hot electron; embedded flash applications; flash memories; low power portable devices; low voltage; manufacturing technologies; mobile devices; multi-level cell technologies; next generation consumer electronic products; programming mechanism; reliability; source-side injection; split gate; Consumer electronics; Costs; Electronics industry; Electrons; Flash memory; Paper technology; Pulp manufacturing; Semiconductor device manufacture; Table lookup; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonvolatile Memory Technology Conference, 1996., Sixth Biennial IEEE International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-3510-4

Type

conf

DOI

10.1109/NVMT.1996.534690

Filename

534690