UHiFET - A new high-frequency High-Voltage device

Author

Ezzeddine, Amin K. ; Huang, Ho C. ; Singer, Jack L.

Author_Institution

AMCOM Commun., Inc., Gaithersburg, MD, USA

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

The HiFET (High-Impedance, High-Voltage FET) configuration is used to connect several semiconductor FETs both DC and RF in series, resulting in high DC bias voltage and high output impedance. The HiFET power and efficiency degrades at high microwave frequencies (i.e. >; 3GHz) due to gate leakage currents. In this article, we propose a new configuration, the Universal HiFET (UHiFET), which uses an additional compensation to equalize the RF voltages and currents of all the transistor cells that are connected in series. This new approach improves the power, efficiency and linearity of the original HiFET configuration at microwave and millimeter wave frequencies. We are presenting a mathematical analysis of the UHiFET and measured data to demonstrate the effectiveness of the proposed approach.

Keywords

equivalent circuits; leakage currents; microwave field effect transistors; millimetre wave field effect transistors; DC bias voltage; UHiFET; gate leakage currents; high-impedance high-voltage FET; microwave field effect transistors; output impedance; transistor cells; Logic gates; Microwave FETs; Optimized production technology; Performance evaluation; Power amplifiers; Radio frequency; Broadband amplifiers; MMICs; high-voltage techniques; microwave devices; power combiners;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972615

Filename

5972615