DocumentCode
2582070
Title
Aluminium nitride metallized ceramic substrate performance
Author
Copeland, David W. ; Powell, Douglas O.
Author_Institution
IBM Corp., Poughkeepsie, NY, USA
fYear
1990
fDate
6-8 Feb 1990
Firstpage
104
Lastpage
107
Abstract
The authors demonstrate the feasibility of using aluminium nitride (AlN) as a substrate material for metallized ceramic modules, the ability to use standard thin-film metallization processes with AlN ceramics, and the improved thermal performance predicted for AlN modules. It is also shown that AlN modules can provide cost savings compared to alumina modules with internal thermal enhancement. The benefits of aluminium nitride may extend beyond the elimination of thermal enhancement and extension of solder bump fatigue life. One possibility is elimination of restrictions on the size of the chip footprint. Other applications are found in packages with wirebonded or tape automated bonding (TAB) attached chips, in which grease or radial finger contact (RFC) is not practical
Keywords
aluminium compounds; ceramics; modules; packaging; substrates; thermal conductivity of solids; thermal expansion; AlN ceramics; TAB attached chips; TCE; cost savings; elimination of thermal enhancement; extension of solder bump fatigue life; feasibility study; internal thermal enhancement; metallized ceramic modules; metallized ceramic substrate performance; standard thin-film metallization processes; thermal conductivity; thermal expansion matching; thermal performance; unrestricted chip size; wirebond attached chips; Aluminum; Bonding; Ceramics; Costs; Fatigue; Inorganic materials; Metallization; Packaging; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal and Temperature Measurement Symposium, 1990. SEMI-THERM VI, Proceedings., Sixth Annual IEEE
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/STHERM.1990.68499
Filename
68499
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