DocumentCode :
2582397
Title :
A surface acoustic wave nitric oxide sensor
Author :
Caron, Joshua J. ; Kenny, Thomas D. ; LeGore, L. Jay ; Libby, Derek G. ; Freeman, Carl J. ; Vetelino, John F.
Author_Institution :
Sensor Res. & Dev. Corp., Orono, ME, USA
fYear :
1997
fDate :
28-30 May 1997
Firstpage :
156
Lastpage :
162
Abstract :
A dual delay line surface acoustic wave (SAW) device employing a ruthenium-doped tungsten trioxide (WO3:Ru) film as a sensing element for nitric oxide (NO) is presented. Exposure of this semiconducting metal oxide (SMO) film to NO results in oxidation of the film, decreasing the film´s carrier concentration and, therefore, its conductivity. This decrease in film conductivity causes a corresponding increase in the SAW velocity. Therefore, when the device is configured as a dual delay line oscillator, the frequency of the sensing channel becomes a sensitive measure of NO concentration. Responses of this sensor to NO concentrations in ppb to low ppm levels in air along with higher concentrations of possible interferent gases are presented. The sensor response features are analyzed in terms of response time, recovery time, minimum detection limit, saturation detection limit and linearity. Conclusions are drawn and future improvements to the sensor are suggested
Keywords :
gas sensors; nitrogen compounds; ruthenium; semiconductor materials; sputtered coatings; surface acoustic wave delay lines; surface acoustic wave sensors; tungsten compounds; NO; NO concentration; SAW device; SAW velocity; WO3:Ru; WO3:Ru film; air; dual delay line oscillator; dual delay line surface acoustic wave device; film carrier concentration; linearity; minimum detection limit; oxidation; recovery time; response time; saturation detection limit; semiconducting metal oxide film; Acoustic sensors; Acoustic waves; Conductive films; Conductivity; Delay lines; Semiconductivity; Semiconductor films; Surface acoustic wave devices; Surface acoustic waves; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium, 1997., Proceedings of the 1997 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3728-X
Type :
conf
DOI :
10.1109/FREQ.1997.638537
Filename :
638537
Link To Document :
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