Graphene-on-SiC and graphene-on-Si transistors and RF applications

The unique ambipolar nature of graphene FETs can benefit various RF circuit applications, such as frequency multipliers, mixers and high-speed radiometers. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene MOSFETs to minimize parasitics and improve gate modulation efficiency in the channel. We present recent progress in epitaxial graphene (n, p)-MOSFETs on both SiC and Si substrates for graphene-on-SiC and graphene-on-Si technologies on 75 mm wafers. The epitaxial graphene MOSFETs are fabricated with simultaneous world-record performance in key device parameters: excellent I-V saturation behaviors, peak field-effect mobility of 9000 cm²/Vs for electron and 3000 cm²/Vs for hole, and peak transconductance of 770 mS/mm.