Miniaturized microwave tunable bandpass filters on high-k LTCC with integrated resistive vias as bias-T

Author

Mi, Xiaoyu ; Toyoda, Osamu ; Ueda, Satoshi ; Nakazawa, Fumihiko

Author_Institution

3D-Integration Technol. Res. Dept., RF MEMS Technol. Res. Lab., Akashi, Japan

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

This paper describes a MEMS tunable bandpass filter operating in the S band region and featuring a low insertion loss of -2.3 dB and small size of 3.7 mm by 4.1 mm. The tunable filter is based on MEMS-varactors-loaded microstrip resonators and has been directly constructed on a high-k low-temperature-co-fired-ceramics (LTCC) wiring wafer whose dielectric constant is 50, using MEMS-on-LTCC technology. The RF signal paths are isolated from the MEMS driving paths by built-in high-resistivity-vias, leading to low insertion loss. RF power-proof performance was evaluated by applying OFDM signals to the device. The results confirm that MEMS tunable filters are sufficiently linear at cell phone power level.

Keywords

band-pass filters; ceramics; circuit tuning; high-k dielectric thin films; micromechanical devices; microstrip resonators; microwave filters; radiofrequency integrated circuits; varactors; LTCC wiring wafer; MEMS tunable bandpass filter; MEMS-on-LTCC technology; MEMS-varactors-loaded microstrip resonator; OFDM signal; RF power-proof performance; RF signal path; S band region; bias-T; cell phone power level; dielectric constant; high-k LTCC; high-k low-temperature-cofired-ceramics; insertion loss; loss -2.3 dB; miniaturized microwave tunable bandpass filter; Band pass filters; Electrodes; High K dielectric materials; Micromechanical devices; Microwave filters; Resonator filters; Varactors; LTCC; MEMS; bias T; high-k; microstrip; reconfigurable radio end; resistive vias; tunable filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972669

Filename

5972669