Title :
Suppression of corner effects in triple-gate bulk FinFETs
Author :
Poljak, Mirko ; Jovanovi, Vladimir ; Suligoj, Tomislav
Author_Institution :
Univ. of Zagreb, Zagreb, Croatia
Abstract :
This paper presents a method of suppressing kink effects which originate in the corners of triple-gate bulk FinFETs. We propose corner implantation to turn off the parasitic corner device which has lower threshold voltage than the bulk device. This method is investigated in triple-gate bulk FinFETs by 3D numerical simulations. Threshold voltage shift of 0.434 V with a decrease in on-state current of only 23% is achieved, while the kink effect in devices´ current-voltage characteristics is completely eliminated. Corner implantation improves devices´ immunity to short-channel effects.
Keywords :
MOSFET; ion implantation; 3D numerical simulations; current-voltage characteristics; implantation; kink effects; on-state current; parasitic corner device; threshold voltage; triple-gate bulk FinFETs; CMOS process; CMOS technology; Doping; FinFETs; Impurities; MOSFETs; Numerical simulation; Scattering; Silicon; Threshold voltage; FinFET; bulk; corner effect; kink effect; short-channel effects;
Conference_Titel :
EUROCON 2009, EUROCON '09. IEEE
Conference_Location :
St.-Petersburg
Print_ISBN :
978-1-4244-3860-0
Electronic_ISBN :
978-1-4244-3861-7
DOI :
10.1109/EURCON.2009.5167791
