Title :
Basic figures of merit for A 1.575 GHz low noise amplifier in 0.35 µm SiGe BiCMOS technology
Author :
Djugova, Alena ; Videnovic-Misic, Mirjana
Author_Institution :
Fac. of Tech. Sci., Univ. of Novi Sad, Novi Sad, Serbia
Abstract :
A design of 1.575 GHz two-stage low noise amplifier (LNA) in a BiCMOS 0.35 mum process is presented. First LNA stage is common source amplifier in cascode configuration with source degeneration set for input matching. Additional stage is introduced in order to increase S21 of the LNA. Simulation results for S11, S12, S21 and S22, together with NF, Kf and B1f are given for presented LNA topology.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; low noise amplifiers; SiGe; SiGe BiCMOS technology; cascode configuration; frequency 1.575 GHz; low noise amplifier; size 0.35 mum; source degeneration set; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Low-noise amplifiers; MOSFETs; Noise figure; Noise measurement; Radio frequency; Silicon germanium; Topology; Low noise amplifier (LNA); S-parameters; noise figure (NF); stability;
Conference_Titel :
EUROCON 2009, EUROCON '09. IEEE
Conference_Location :
St.-Petersburg
Print_ISBN :
978-1-4244-3860-0
Electronic_ISBN :
978-1-4244-3861-7
DOI :
10.1109/EURCON.2009.5167792
