DocumentCode
2582986
Title
Basic figures of merit for A 1.575 GHz low noise amplifier in 0.35 µm SiGe BiCMOS technology
Author
Djugova, Alena ; Videnovic-Misic, Mirjana
Author_Institution
Fac. of Tech. Sci., Univ. of Novi Sad, Novi Sad, Serbia
fYear
2009
fDate
18-23 May 2009
Firstpage
1225
Lastpage
1230
Abstract
A design of 1.575 GHz two-stage low noise amplifier (LNA) in a BiCMOS 0.35 mum process is presented. First LNA stage is common source amplifier in cascode configuration with source degeneration set for input matching. Additional stage is introduced in order to increase S21 of the LNA. Simulation results for S11, S12, S21 and S22, together with NF, Kf and B1f are given for presented LNA topology.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; low noise amplifiers; SiGe; SiGe BiCMOS technology; cascode configuration; frequency 1.575 GHz; low noise amplifier; size 0.35 mum; source degeneration set; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Low-noise amplifiers; MOSFETs; Noise figure; Noise measurement; Radio frequency; Silicon germanium; Topology; Low noise amplifier (LNA); S-parameters; noise figure (NF); stability;
fLanguage
English
Publisher
ieee
Conference_Titel
EUROCON 2009, EUROCON '09. IEEE
Conference_Location
St.-Petersburg
Print_ISBN
978-1-4244-3860-0
Electronic_ISBN
978-1-4244-3861-7
Type
conf
DOI
10.1109/EURCON.2009.5167792
Filename
5167792
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