Title :
High temperature characterization of SiC-JFET and modelling
Author :
Mousa, R. ; Planson, D. ; Morel, H. ; Raynaud, C.
Author_Institution :
INSA Lyon, Villeurbanne
Abstract :
Silicon Carbide (SiC) is considered as the wide band gap semiconductor material that can presently compete with Silicon (Si) material for power switching devices. Compact circuit simulation models for SiC devices are of extreme importance for designing and analyzing converter circuit, in particular, if comparisons with Si devices should be performed. In this paper, three different kinds of Silicon Carbide JFET samples were characterized at temperatures up to 225degC. The characterization is based on the DC (Current - Voltage) characteristic measurements using a curve tracer and on the AC (Capacitance - Voltage) measurements using an impedance analyzer. We keep in mind to establish an analytical model that will be used in the design of a power converter.
Keywords :
circuit simulation; junction gate field effect transistors; power convertors; semiconductor device models; silicon compounds; wide band gap semiconductors; AC capacitance-voltage measurements; DC current-voltage characteristic measurements; JFET; SiC; circuit simulation models; converter circuit; curve tracer; high temperature characterization; impedance analyzer; power converter design; power switching devices; wide band gap semiconductor material; Capacitance measurement; Circuit simulation; Current measurement; Impedance measurement; Power semiconductor switches; Semiconductor materials; Silicon carbide; Temperature; Voltage measurement; Wide band gap semiconductors; JFET; Measurement; Modelling; SiC-device;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417501
