DocumentCode :
2583345
Title :
Concurrent dual-band power amplifier with different operation modes
Author :
Liu, Rui ; Schreurs, Dominique ; De Raedt, Walter ; Vanaverbeke, Frederik ; Mertens, Robert
Author_Institution :
Div. ESAT-TELEMIC, K.U. Leuven, Leuven, Belgium
fYear :
2011
fDate :
5-10 June 2011
Firstpage :
1
Lastpage :
4
Abstract :
In this work for the first time a simultaneous 1.5 GHz / 3.8 GHz dual band power amplifier (PA) with different operation modes for each frequency is presented. A dedicated matching network is employed to synthesize Class-AB impedance condition at lower bands and Class-J condition at upper bands. A low cost GaN-on-Si device with plastic package was used for demonstration. The measured results show a 47% and 52% power added efficiency (PAE) for an output power of 37.3 dBm and 35.7 dBm at 1.5 GHz and 3.8 GHz, respectively. Furthermore, the PA exhibits a drain efficiency of more than 41% across 1.4 - 1.6 GHz and 3.0 - 3.9 GHz whilst delivering an average output power of more than 36 dBm. To our best knowledge, the highest output power and bandwidths in concurrent dual-band PAs reported to date.
Keywords :
gallium compounds; microwave power amplifiers; GaN; class-AB impedance condition; concurrent dual-band power amplifier; efficiency 47 percent; efficiency 52 percent; frequency 1.4 GHz to 1.6 GHz; frequency 3.0 GHz to 3.9 GHz; matching network; operation modes; plastic package; power added efficiency; Bandwidth; Dual band; Gain; Impedance; Impedance matching; Power amplifiers; Power generation; GaN-on-Si HEMTs; Power amplifier; broadband; class-J; concurrent dual band;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
ISSN :
0149-645X
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2011.5972698
Filename :
5972698
Link To Document :
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