Title :
Boron Implanted Shallow Junction Formation By High-temperature/ Short-time/high-ramping-rate(400/spl deg/C/sec) RTA
Author :
Shishiguchi, S. ; Mineji, A. ; Hayashi, T. ; Saito, S.
Author_Institution :
ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229-11, Japan
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623709
