Title :
A physics-based power diode model optimized through experiment based parameter extraction
Author :
Chibante, Rui ; Araújo, Armando ; Carvalho, Adriano
Author_Institution :
Inst. Super. de Engenharia do porto, Porto
Abstract :
This paper presents a physics-based power diode model with parameters established through an extraction procedure validated experimentally. The core of the model is based on a finite element approach that solves for electron/hole concentration in low doped zone of the device. As physical based models need a significant number of parameters an automatic parameter extraction method has been developed. The procedure, based on an optimization algorithm (simulated annealing), enables an efficient extraction of parameters, needed for physics-based semiconductor models, requiring some simple device waveform measurements. Implementation of developed power diode model, in SPICE like simulators, and extraction procedure is presented. Experimental validation is performed.
Keywords :
finite element analysis; parameter estimation; power semiconductor diodes; semiconductor device models; simulated annealing; automatic parameter extraction method; device waveform measurement; electron concentration; finite element approach; hole concentration; optimization algorithm; physics-based power diode model; semiconductor device models; simulated annealing; Charge carrier processes; Charge carriers; Circuit simulation; Equations; Finite element methods; P-i-n diodes; Parameter extraction; Power semiconductor devices; SPICE; Semiconductor diodes; Device modeling; Estimation technique; Power semiconductor device; Simulation;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417556