Title :
Recent developments in IGCT gate units
Author :
Backlund, Björn ; Luscher, M.
Author_Institution :
ABB Switzerland Ltd., Lenzburg
Abstract :
Recent improvements in GCT silicon design have allowed increased turn-off capabilities for IGCTs thus placing greater demands on the gate-unit. This paper shows how the design challenges arising from this new turn-off capability have been addressed to re-establish "a balance" between the semiconductor and the gate unit for optimal IGCT performance.
Keywords :
thyristors; GCT silicon design; IGCT gate unit; integrated gate commutated thyristor; power semiconductor device; turn-off capability; Capacitors; Ceramics; Choppers; Impedance; Inductance; Paramagnetic resonance; Silicon; Switching circuits; Temperature; Voltage; IGCT; Power semiconductor device; Reliability;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417564
