• DocumentCode
    2584156
  • Title

    A 4″ wafer photostepper-based carbon nanotube FET technology for RF applications

  • Author

    Schroter, M. ; Kolev, P. ; Wang, D. ; Eron, M. ; Lin, S. ; Samarakone, N. ; Bronikowski, M. ; Yu, Z. ; Sampat, P. ; Syams, P. ; McKernan, S.

  • Author_Institution
    RFNano Corp., Newport Beach, CA, USA
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Depletion-mode CNTFETs have been fabricated on 4" wafers with a photostepper-based process. The transistors show significant current and power gain with peak (fT, fmax) values of (9, 10) GHz. Compact model results are compared to experimental characteristics over bias and frequency. First RF amplifier circuit results are also shown.
  • Keywords
    carbon nanotubes; field effect transistors; nanotube devices; radiofrequency amplifiers; C; RF amplifier circuit; RF applications; depletion-mode CNTFET; photostepper-based process; power gain; size 4 in; transistors; wafer photostepper-based carbon nanotube FET technology; CNTFETs; Electron tubes; Gain; Integrated circuit modeling; Logic gates; Radio frequency; CNTFET modeling; CNTFET technology; Carbon nanotube FETs; RF applications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5972750
  • Filename
    5972750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2584156