A simple method to determine power-dissipation dependent thermal resistance for GaN HEMTs

Author

Liu, Jun ; Sun, Lingling ; Yu, Zhiping ; Condon, Marissa

Author_Institution

Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

A simple method to determine the power dissipation dependent thermal resistance and the junction temperature of a power AlGaN/GaN HEMT proposed. The method is based on a rigorous mathematical treatment of the nonlinear characteristics of thermal resistance. It is hence suitable for modeling of transistors operating at any power densities. This method has been verified by an accurate predicting of junction temperature of an 8×80μm×0.3μm AlGaN/GaN HEMT, fabricated with an in-house AlGaN/GaN HEMTs technology.

Keywords

aluminium compounds; gallium compounds; high electron mobility transistors; mathematical analysis; thermal resistance; AlGaN-GaN; in-house HEMT technology; junction temperature; mathematical treatment; nonlinear characteristics; power densities; power dissipation dependent thermal resistance; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Temperature measurement; Thermal resistance; AlGaN/GaN HEMTs; extraction; junction temperature; thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972752

Filename

5972752