Title :
Deep trench MOSFET structures study for a 1200 Volts application
Author :
Théolier, L. ; Isoird, K. ; Morancho, F. ; Roig, J. ; Mahfoz-Kotb, H. ; Brunet, M. ; Dubreuil, P.
Author_Institution :
Univ. of Toulouse, Toulouse
Abstract :
In this work we studied some possible high voltage MOSFETs structures that can replace the IGBT in the railway traction converters. In this purpose, some high voltage power MOS structures are presented and theoretically compared using 2D simulations. Simulations results show that the DT-UMOSFET should be a good challenger to the 1200 Volts IGBT. Moreover, the influence of various parameters, like trench width, trench verticality or boron dose, on DT-UMOSFET static performances is shown.
Keywords :
insulated gate bipolar transistors; power MOSFET; semiconductor device models; 2D simulations; DT-UMOSFET; IGBT; deep trench MOSFET structures; high voltage MOSFET structures; power MOS structures; power MOSFET; semiconductor device models; voltage 1200 V; Boron; Doping; Epitaxial layers; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Rail transportation; Semiconductor diodes; Uniform resource locators; Voltage; MOSFET; Power semiconductor device; Super Junction Devices; Traction application;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417583
