C-Ku band GaN MMIC T/R frontend module using multilayer ceramics technology

A C-Ku band GaN monolithic microwave integrated circuit (MMIC) transmitter/receiver (T/R) frontend module with a novel RF interface structure has been successfully developed by using multilayer ceramics technology. This interface improves the insertion loss with wideband characteristics operating up to 40 GHz. The module contains a GaN power amplifier (PA) with output power higher than 10 W over 6-18 GHz and a GaN low-noise amplifier (LNA) with a gain of 15.9 dB over 3.2-20.4 GHz and noise figure (NF) of 2.3-3.7 dB over 4-18 GHz. A fabricated T/R module occupying only 12 × 30 mm² delivers an output power of 10 W up to the Ku-band. To our knowledge, this is the first demonstration of a C-Ku band T/R frontend module using GaN MMICs with wide bandwidth, 10W output power, and small size operating up to the Ku-band.