Title :
A 45% power added efficiency, Ku-band 60W GaN power amplifier
Author :
Yamauchi, Kazuhisa ; Noto, Hifumi ; Nonomura, Hiroyuki ; Kunugi, Satoshi ; Nakayama, Masatoshi ; Hirano, Yoshihito
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura-city, Japan
Abstract :
A Ku-band 60W GaN power amplifier is presented. To obtain the high efficiency, new matching circuit topology to control the reflection phase at the 2nd harmonic frequency (2fo) is applied to the power amplifier. The measured power added efficiency (PAE) of 44.9% with the output power of 47.9dBm (62.2W) is obtained in the 15GHz-band. To the best of our knowledge, the PAE is the highest of the Ku-band GaN power amplifiers reported to date.
Keywords :
III-V semiconductors; gallium compounds; microwave power amplifiers; wide band gap semiconductors; 2nd harmonic frequency; GaN; Ku-band power amplifier; efficiency 44.9 percent; efficiency 45 percent; frequency 15 GHz; matching circuit topology; power 60 W; power 62.2 W; power added efficiency; Frequency measurement; Gallium nitride; Power amplifiers; Power generation; Power measurement; Reflection; Transmission line measurements; Efficiency; GaN-HEMT; Ku-band; Power amplifier;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972762
