Title :
SiC-Powerdiodes: Design and performance
Author :
Bartsch, Wolfgang ; Thomas, Bernd ; Mitlehner, Heinz ; Bloecher, Bernd ; Gediga, Swen
Author_Institution :
SiCED Electron. Dev. GmbH & Co. KG, Erlangen
Abstract :
In this work we discuss static measurements on bipolar 6.5 kV-SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4deg off the (0001) basal plane in order to prove design rules developed for Si-devices. To suppress emitter recombination currents, the p-emitter thickness has to be increased. The switching behaviour of optimized 6.5 kV-diodes with a 3 mum thick p-emitter at different current levels at DC link voltages of 4 kV and at junction temperatures up to 125degC is shown. For these diodes first results on forward stability are also presented.
Keywords :
power semiconductor diodes; semiconductor device measurement; silicon compounds; wide band gap semiconductors; DC link voltages; SiC; SiC power diodes; SiC wafers; bipolar SiC-diodes; emitter recombination currents; forward stability; p-emitter thickness; size 3 mum; static measurements; voltage 4 kV; voltage 6.5 kV; Metallization; Power measurement; Power semiconductor devices; Radiative recombination; Semiconductor device measurement; Semiconductor diodes; Silicon carbide; Stress; Temperature; Voltage; Bipolar device; Measurement; Passive component; Power semiconductor device;
Conference_Titel :
Power Electronics and Applications, 2007 European Conference on
Conference_Location :
Aalborg
Print_ISBN :
978-92-75815-10-8
Electronic_ISBN :
978-92-75815-10-8
DOI :
10.1109/EPE.2007.4417603
