DocumentCode :
2584665
Title :
Digital predistorted inverse class-F GaN PA with novel PAPR reduction technique
Author :
Wang, Jingqi ; Xu, Yingjie ; Zhu, Xiaowei
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
fYear :
2011
fDate :
5-10 June 2011
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, a digital predistorted inverse class-F GaN power amplifier with novel PAPR reduction technique, in which not only peaks but also valleys of signal are clipped to reduce the PAPR as much as possible, is presented. The inverse class-F PA is implemented by using Cree´s CGH40010 GaN HEMT with a 10W output power. Measurement results show that ACPR of the proposed PA decreases from -35.4dBc to -51.9dBc for a wideband OFDM signal with 20MHz bandwidth and 8dB PAPR after PAPR reduction. Drain efficiency of the PA is 31.3% at an average output power of 33.6dBm.
Keywords :
OFDM modulation; gallium compounds; high electron mobility transistors; power amplifiers; Cree CGH40010 HEMT; GaN; PAPR reduction technique; bandwidth 20 MHz; digital predistorted inverse class-F power amplifier; efficiency 31.1 percent; orthogonal frequency-division multiplexing; peak-to-average power ratio; power 10 W; wideband OFDM signal; Gallium nitride; Linearity; Peak to average power ratio; Power generation; Predistortion; GaN; OFDM; digital predistortion; inverse class-F; peak-to-average power ratio; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
ISSN :
0149-645X
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2011.5972781
Filename :
5972781
Link To Document :
بازگشت