Title :
Millimeter wave field effect transistors produced using high purity semiconducting single-walled carbon nanotubes
Author :
Happy, H. ; Nougaret, L. ; Derycke, V. ; Dambrine, G.
Author_Institution :
Inst. of Electron., Microelectron. & Nanotechnol., Villeneuve-d´´Ascq, France
Abstract :
We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for high frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating frequency above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of sorted SWNTs for high frequency electronics.
Keywords :
carbon nanotubes; millimetre wave field effect transistors; FET; carbon nanotube field effect transistors; high frequency electronics; high purity semiconducting single-walled carbon nanotubes; millimeter wave field effect transistors; CNTFETs; Carbon nanotubes; Cutoff frequency; Electron tubes; Logic gates; Carbon nanotube; high frequency; millimeter wave FET; single-walled CNTFET;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972794