Low Temperature Gold-to-Gold Bonded Semiconductor Disk Laser

Author

Rantamaki, Antti ; Lindfors, J. ; Silvennoinen, Minna ; Kontio, J. ; Tavast, Miki ; Okhotnikov, Oleg G.

Author_Institution

Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland

Volume

25

Issue

11

fYear

2013

fDate

1-Jun-13

Firstpage

1062

Lastpage

1065

Abstract

We present a gold-to-gold bonding method that combines features of surface activated bonding and capillary bonding. The process is performed at a relatively low temperature of 150°C and therefore allows the integration of materials with highly mismatched coefficients of thermal expansion. In this letter, the potential of this technique is illustrated by assembling a high-power flip chip semiconductor disk laser utilizing a chemical vapor deposition diamond heat spreader. The laser produces up to 14 W of output power at 15°C gain element temperature with a nearly diffraction-limited output beam. Further scaling of bonding area to wafer-level could make this method useful in the packaging of various optoelectronic and microelectronic components.

Keywords

bonding processes; chemical vapour deposition; quantum well lasers; thermal expansion; capillary bonding; chemical vapor deposition diamond heat spreader; diffraction-limited output beam; gain element temperature; gold-to-gold bonding method; high-power flip chip semiconductor disk laser; low temperature gold-to-gold bonded semiconductor disk laser; microelectronic component packaging; mismatched thermal expansion coefficients; optoelectronic component packaging; surface activated bonding; temperature 15 degC; temperature 150 degC; wafer level; Gold-to-gold bonding; low temperature bonding; molecular beam epitaxy (MBE); semiconductor disk laser (SDL);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2258147

Filename

6504471