DocumentCode
2585148
Title
High Voltage RF LDMOS Technology for Broadcast Applications
Author
Theeuwen, S.J.C.H. ; Sneijers, W. J A M ; Klappe, J.G.E. ; de Boet, J.A.M.
Author_Institution
NXP Semicond., Nijmegen
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
24
Lastpage
27
Abstract
We present high voltage (40-50V) RF LDMOS technologies to realize 300-500 W power levels for frequencies up to 1.0 GHz. This technology has an extremely good ruggedness, one octave wide band operation, and reliable circuit matching.
Keywords
MOSFET; radiofrequency amplifiers; RF LDMOS; circuit; frequency 1.0 GHz; high voltage; laterally diffused MOS transistors; octave wide band operation; power 300 W to 500 W; voltage 40 V to 50 V; Broadcast technology; Broadcasting; Integrated circuit technology; Isolation technology; Microwave integrated circuits; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Voltage; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-007-1
Type
conf
DOI
10.1109/EMICC.2008.4772219
Filename
4772219
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