Title :
High Voltage RF LDMOS Technology for Broadcast Applications
Author :
Theeuwen, S.J.C.H. ; Sneijers, W. J A M ; Klappe, J.G.E. ; de Boet, J.A.M.
Author_Institution :
NXP Semicond., Nijmegen
Abstract :
We present high voltage (40-50V) RF LDMOS technologies to realize 300-500 W power levels for frequencies up to 1.0 GHz. This technology has an extremely good ruggedness, one octave wide band operation, and reliable circuit matching.
Keywords :
MOSFET; radiofrequency amplifiers; RF LDMOS; circuit; frequency 1.0 GHz; high voltage; laterally diffused MOS transistors; octave wide band operation; power 300 W to 500 W; voltage 40 V to 50 V; Broadcast technology; Broadcasting; Integrated circuit technology; Isolation technology; Microwave integrated circuits; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Voltage; Wideband;
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
DOI :
10.1109/EMICC.2008.4772219
