DocumentCode
258516
Title
Millimeter-wave active inductor in 65 nm CMOS technology
Author
Pepe, Domenico ; Zito, Domenico
Author_Institution
Tyndall Nat. Inst. Lee Maltings, Cork, Ireland
fYear
2013
fDate
26-27 June 2013
Firstpage
19
Lastpage
23
Abstract
A millimeter-wave active inductor circuit has been designed and fabricated in 65 nm bulk CMOS technology. The measurement results show an equivalent inductance of 133 pH with a quality factor exceeding 400 at 50 GHz, demonstrating experimentally for the first time the implementation of high-Q active inductors operating at the millimeter-waves in CMOS technology.
Keywords
CMOS integrated circuits; Q-factor; inductors; integrated circuit design; millimetre wave circuits; CMOS technology; frequency 50 GHz; high-Q active inductors; millimeter wave active inductor; quality factor; size 65 nm; Active inductor; CMOS; millimeter-wave;
fLanguage
English
Publisher
iet
Conference_Titel
Irish Signals & Systems Conference 2014 and 2014 China-Ireland International Conference on Information and Communications Technologies (ISSC 2014/CIICT 2014). 25th IET
Conference_Location
Limerick
Type
conf
DOI
10.1049/cp.2014.0652
Filename
6912723
Link To Document