DocumentCode :
2585231
Title :
Miniaturized Multilayer CPW pHEMT Amplifiers
Author :
Sun, Q. ; Vo, V.T. ; Davies, R.A. ; Tan, TY ; Rezazadeh, A.A.
Author_Institution :
Electromagn. Res. Centre, Univ. of Manchester, Manchester
fYear :
2008
fDate :
27-28 Oct. 2008
Firstpage :
44
Lastpage :
47
Abstract :
Compact pHEMT amplifiers, which are composed of newly developed miniaturized multilayer inductors and capacitors, have been designed, fabricated and characterised. Their measured performances are presented and compared with those of amplifiers composed of conventional planar components. The results show that multilayer technology reduces the size of the amplifiers by approximately 50% while maintaining the same performance. In this paper we demonstrate that the developed compact components are integrated with pre-fabricated GaAs pHEMTs to form 3D MMICs providing excellent performance and space saving resulting in low cost manufacturing of future MMICs.
Keywords :
III-V semiconductors; MMIC; coplanar waveguides; gallium arsenide; high electron mobility transistors; millimetre wave amplifiers; 3D MMIC; CPW pHEMT amplifiers; GaAs; compact components; miniaturized amplifiers; multilayer technology; Capacitors; Coplanar waveguides; Costs; Gallium arsenide; Inductors; MMICs; Nonhomogeneous media; PHEMTs; Performance evaluation; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
Type :
conf
DOI :
10.1109/EMICC.2008.4772224
Filename :
4772224
Link To Document :
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