Power handling and intermodulation distortion of contour-mode AlN MEMS resonators and filters

Author

Nordquist, Christopher D. ; Olsson, Roy H., III

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

We report measurements of the power handling and intermodulation distortion of piezoelectric contour mode resonators and filters operating near 500 MHz. The output power capability scales as the inverse of the motional impedance squared, and the power handling of resonator filter circuits scales with the number of resonators combined in series and parallel. Also, the third-order intercept depends on the measurement tone spacing. Individual AlN resonators with 50 Ω motional impedance demonstrate output power capability of +10 dBm and OIP₃ >; +20 dBm, while an eight resonator filter demonstrates output power handling of +14 dBm and a OIP₃ >; +32 dBm.

Keywords

aluminium compounds; intermodulation distortion; microcavities; micromechanical resonators; piezoelectric devices; resonator filters; AlN; intermodulation distortion; motional impedance squared; piezoelectric contour-mode MEMS resonators; power handling; resistance 50 ohm; resonator filter circuits; third-order intercept; Filter banks; Impedance; Optical filters; Optical resonators; Power generation; Resonant frequency; Resonator filters; Resonator Filters; intermodulation distortion; piezoelectric devices; radiofrequency microelectromechanical systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972814

Filename

5972814