• DocumentCode
    2585280
  • Title

    Process Stabilization and Sensitivity Analyses of a Single Recess GaAs pHEMT Process using Device Simulations

  • Author

    Abele, Peter ; Schäfer, Michael ; Splettstosser, J. ; Thinnes, Martin ; Stieglauer, Hermann ; Behammer, Dag

  • Author_Institution
    United Monolithic Semicond. GmbH, Ulm
  • fYear
    2008
  • fDate
    27-28 Oct. 2008
  • Firstpage
    56
  • Lastpage
    59
  • Abstract
    In this work we investigate device simulations for a sensitivity analyses on the PH25 single recess pHEMT process. The relation of the most critical process and epitaxial parameters on the electrical DC parameters are presented and discussed. The control of the recess etching is an important process module in stabilizing the electrical parameters. Improving the recess etching resulted in a significant reduced spread of the electrical parameters.
  • Keywords
    III-V semiconductors; etching; gallium arsenide; high electron mobility transistors; semiconductor process modelling; GaAs; device simulations; electrical DC parameters; process stabilization; recess etching; sensitivity analyses; single recess pHEMT process; Analytical models; Doping; Equations; Etching; Gallium arsenide; Leakage current; PHEMTs; Schottky barriers; Sensitivity analysis; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
  • Conference_Location
    Amsterdam
  • Print_ISBN
    978-2-87487-007-1
  • Type

    conf

  • DOI
    10.1109/EMICC.2008.4772227
  • Filename
    4772227
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2585280