Title : 
Over 10MHz bandwidth envelope-tracking DC/DC converter for flexible high power GaN amplifiers
         
        
            Author : 
Le Gallou, Nicolas ; Sardin, David ; Delepaut, Christophe ; Campovecchio, Michel ; Rochette, Stephane
         
        
            Author_Institution : 
ESTEC, ESA, Noordwijk, Netherlands
         
        
        
        
        
        
            Abstract : 
This paper describes a fast envelope-tracking circuit capable of 10 MHz (up to 17.5 MHz) bandwidth based on RF GaN switching devices and 50 MHz switching frequency. The efficiency of the VHF converter is 84% to 90% which is comparable to a conventional DC/DC converter for spaceborne application. A demonstrator has been built and mated with a RF GaN HEMT output stage. The C/I measurement for 10-12W RF output power close to saturation show a linearity improvement by 5-8 dB and an efficiency improvement of up to 8 points when compared to the case of no tracking circuit.
         
        
            Keywords : 
DC-DC power convertors; III-V semiconductors; gallium compounds; power HEMT; power amplifiers; radiofrequency amplifiers; tracking; wide band gap semiconductors; C-I measurement; GaN; HEMT output stage; RF switching device; VHF converter; bandwidth 10 MHz; bandwidth envelope-tracking DC-DC converter; efficiency improvement; high power amplifier; linearity improvement; switching frequency; tracking circuit; Gallium nitride; HEMTs; Indexes; Pulse width modulation; Radio frequency; Resonant frequency; Switches; DC/DC converter; GaN technology; HPA; SSPA; envelope-tracking;
         
        
        
        
            Conference_Titel : 
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
         
        
            Conference_Location : 
Baltimore, MD
         
        
        
            Print_ISBN : 
978-1-61284-754-2
         
        
            Electronic_ISBN : 
0149-645X
         
        
        
            DOI : 
10.1109/MWSYM.2011.5972825