A Mathematical Technique to estimate the High Frequency Current Inside the Silicon Die from the Noise Measurements

In this paper, we have shown a method to determine the current drawn by the device as a function of time. It is normally difficult to determine the switching current drawn by the device as a function of time. In this paper, the current drawn by the device is determined by measuring the voltage (Vx) at some desire location on the top of the device and then by simulating the impedance profile from the basic topology of the power delivery network. The L, C and R of the power deliver network were assumed as the fundamental parameters of our methodology. In our methodology, some of the AC parameters of power delivery network including the average current drawn by the device, the average voltage at the measuring node and the steady power supply voltage, were assumed to be known.