DocumentCode
2585512
Title
Perspectives of (sub-) 32nm CMOS for Analog/RF and mm-wave Applications
Author
Dehan, M. ; Parvais, B. ; Mercha, A. ; Decoutere, S. ; Subramanian, V. ; Groeseneken, G. ; Sansen, W.
Author_Institution
IMEC, Leuven
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
103
Lastpage
106
Abstract
New process modules and device architectures for (sub-) 32 nm CMOS lead to both opportunities and challenges for analog/RF and mm-wave circuit design. A survey will be given describing the advanced process modules and competing architectures (planar bulk CMOS versus FinFETS), and their impact on analog/RF performance. FinFETs will be shown to be better suited for analog baseband design and to have acceptable RF performance in the 1-10 GHz range, while planar bulk CMOS outperforms the FinFETs for sub-circuits above 10 GHz.
Keywords
CMOS integrated circuits; MOSFET; analogue integrated circuits; integrated circuit design; millimetre wave integrated circuits; CMOS; FinFET; analog/RF circuit design; device architectures; frequency 1 GHz to 10 GHz; mm-wave circuit design; process modules; size 32 nm; CMOS analog integrated circuits; CMOS process; CMOS technology; FinFETs; High-K gate dielectrics; Leakage current; Lithography; Optical attenuators; Radio frequency; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-007-1
Type
conf
DOI
10.1109/EMICC.2008.4772239
Filename
4772239
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