A new Multi-Harmonic Volterra model dedicated to GaN packaged transistor or SSPA for pulse application

Author

Demenitroux, W. ; Maziere, C. ; Gatard, E. ; Dellier, S. ; Saboureau, C. ; Campovecchio, M. ; Quere, R.

Author_Institution

AMCAD Eng., Limoges, France

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) and packaged transistors used in radar systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory. In this work, we focus on a pulsed identification method which has been made from time domain load pull measurement performed on a packaged transistor. The model has been validated by pulsed RF measurement in the optimum area for several frequencies.

Keywords

III-V semiconductors; Volterra equations; gallium compounds; microwave measurement; microwave power amplifiers; microwave transistors; radar; semiconductor device models; time measurement; wide band gap semiconductors; Agilent X-parameters; GaN; SSPA; dynamic Volterra theory; harmonic superposition; macromodeling methodology; multiharmonic volterra model; packaged transistor; packaged transistors; pulse application; pulsed RF measurement; pulsed identification method; radar systems; solid-state power amplifiers; time domain load pull measurement; Instruments; Marketing and sales; Pulse measurements; Size measurement; Wireless communication; Behavioral modeling; GaN packaged transistors; SSPA; design flow; memory effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972829

Filename

5972829