Title :
The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells
Author :
Zhen Bi ; Jincheng Zhang ; Ling Lv ; Yue Hao
Author_Institution :
Sch. of Phys. & Optoelectron. Eng., Xidian Univ., Xi´an, China
Abstract :
The effect of 3-MeV proton irradiation on InGaN/GaN multiple quantum wells (MQWs) solar cells was investigated. The irradiation degradation of the photoluminescence characteristics of the InGaN film was also measured, indicating its potential to be used in space solar cells. With the proton fluence increasing from 0 to 1 × 1014/cm2, the conversion efficiency (η) of the InGaN/GaN MQWs cell declined from 0.61% to 0.14%.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; proton effects; quantum well devices; semiconductor quantum wells; semiconductor thin films; solar cells; thin film devices; wide band gap semiconductors; InGaN-GaN; MQW solar cells; conversion efficiency; electron volt energy 3 MeV; irradiation degradation; multiple quantum well solar cells; photoluminescence characteristics; proton fluence; proton irradiation effect; space solar cells; thin film; Films; Gallium arsenide; Gallium nitride; Photovoltaic cells; Protons; Quantum well devices; Radiation effects; InGaN; Solar cells; irradiation; proton;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2327072
