• DocumentCode
    2585732
  • Title

    R-3 Ferroelectric Memory

  • Author

    Otsuki, T. ; Sakai, Yoshiki ; Onishi, Shotaro ; Mazure, C. ; Jones, Roy

  • Author_Institution
    Matsushita Electronics
  • fYear
    1997
  • fDate
    10-12 June 1997
  • Firstpage
    110
  • Lastpage
    110
  • Abstract
    Summary form only given. Ferroelectric memories utilize an electriically polarizable material such as Pb(Zr,Ti)03 or SrBi;!Ta209t o store information in a non-volatile fashion. Recent improvements in the understanding of these materials and associated electrodes allow the possibility of high density memories with multiple (> 1E10) read/write cycles and low voltage (few volts) switching. This discussion section will address two major issues associated with these materials.
  • Keywords
    Ferroelectric materials; Polarization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
  • Print_ISBN
    4-930813-75-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.1997.623721
  • Filename
    623721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2585732