High Power Microstrip GaN-HEMT Switches for Microwave Applications

Author

Alleva, V. ; Bettidi, A. ; Cetronio, A. ; De Dominicis, M. ; Ferrari, Mauro ; Giovine, Ennio ; Lanzierf, C. ; Limiti, Ernesto ; Megna, A. ; Peroni, M. ; Romaninf, P.

Author_Institution

Elettron. SpA, Rome

fYear

2008

fDate

27-28 Oct. 2008

Firstpage

194

Lastpage

197

Abstract

In this paper the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT MMIC switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performances. In particular the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation and a power handling capability at 9 GHz of better than 39 dBm at 1 dB insertion loss compression point; the wideband switch has an insertion loss lower than 2.2 dB, better than 25 dB isolation and a power handling capability of better than 38 dBm in the entire bandwidth.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MMIC; gallium compounds; microstrip components; microwave switches; power HEMT; power integrated circuits; power semiconductor switches; wide band gap semiconductors; GaN; X-band switch; frequency 2 GHz to 18 GHz; high power switches; microstrip HEMT switches; microwave applications; wideband high power SPDT MMIC switches; Bandwidth; Fabrication; Gallium nitride; Insertion loss; Isolation technology; MMICs; Microstrip; Switches; Testing; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-007-1

Type

conf

DOI

10.1109/EMICC.2008.4772262

Filename

4772262